Patent · US Active

Adaptive gate-biased field effect transistor for low-dropout regulator

US10545523B1 · kind B1 · utility

13Cited by

34References

21Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Zhengzheng Wu · Santa Clara, US
Chao Song · Beijing, CN

Key dates

Filing date	Oct 25, 2018
Grant date	Jan 28, 2020
Priority date	—
Expiry date	Oct 25, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG05F1/618
WIPO fieldControl
WIPO sectorInstruments

Abstract

A load circuit of a low-dropout (LDO) regulator is disclosed herein according to certain aspects. The load circuit includes a field effect transistor having a source coupled to a supply rail, a gate, and a drain coupled to a gate of a pass transistor of the LDO regulator. The load circuit also includes an adjustable voltage source coupled between the drain and the gate of the field effect transistor, and a voltage control circuit configured to detect a change in a current load through the pass transistor, and to adjust a voltage of the adjustable voltage source based on the detected change in the current load.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.