Patent · US Active

Memory controller, memory system, and memory controller control method

US10545804B2 · kind B2 · utility

2Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 22, 2015
Grant dateJan 28, 2020
Priority date
Expiry dateApr 4, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/52
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

[Object] To sufficiently reduce frequency of error occurrence in memory cells.[Solution] A reading unit reads read data from a memory cell, the read data including an information bit and reversal information for determining whether or not the information bit has been reversed. In addition, an error detection/correction unit detects the presence or absence of an error in the information bit and corrects the error. A data reversing unit reverses the information bit that has the error corrected and the reversal information. Furthermore, a writing unit writes the reversed information bit and the reversed reversal information in the memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.