Distributed integrated high-speed solid-state non-volatile random-access memory
US10545861B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Jun 28, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7201
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system may include embedded storage devices, each including: a first solid state drive (SSD) storage portion and a second non-volatile random-access memory (NVRAM) portion. The NVRAM portion includes a random access memory (RAM) device, a processing device, and an energy source, where the first SSD portion and the second NVRAM portion are separately addressable. The system further includes a storage system controller, operatively coupled to the embedded storage devices via a network. The storage system controller may be to: determine that data is to be stored in the first SSD storage portion of a first embedded storage device of the plurality of embedded storage devices; and buffer the data in the second NVRAM portion of a second embedded storage device of the plurality of embedded storage devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.