Magnetic josephson junction driven flux-biased superconductor memory cell and methods
US10546621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Jun 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/805
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic Josephson junction driven flux-biased superconductor memory cell and methods are provided. A memory cell may include a magnetic Josephson junction (MJJ) superconducting quantum interference device (SQUID) comprising a first MJJ device and a second MJJ device, arranged in parallel to each other, where the MJJ SQUID is configured to generate a first flux-bias or a second flux-bias, where the first flux-bias corresponds to a first direction of current flow in the MJJ SQUID and the second flux-bias corresponds to a second direction of current flow in the MJJ SQUID. The memory cell may further include a superconducting metal-based superconducting quantum interference device (SQUID) including a first Josephson junction (JJ) and a second JJ, arranged in parallel to each other, where each of the first JJ and the second JJ has a critical current responsive to any flux-bias generated by the MJJ SQUID.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.