Patent · US Active

Semiconductor substrate with electrically isolating dielectric partition

US10546816B2 · kind B2 · utility

0Cited by

8References

12Claims

0Family size

Assignee

Nexperia B.V. · NL

Inventors

Hans-Martin Ritter · Nahe, DE
Joachim Utzig · Nijmegen, NL
Frank Burmeister · Hamburg, DE
Godfried Henricus Josephus Notermans · Hamburg, DE
Jochen Wynants · Hamburg, DE
Rainer Mintzlaff · Reinbek, DE

Key dates

Filing date	Nov 18, 2016
Grant date	Jan 28, 2020
Priority date	—
Expiry date	Nov 18, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/111
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.