FinFET-based ESD devices and methods for forming the same

US10546850B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Wun-Jie Lin · Hsinchu, TW
• Ching-Hsiung Lo · San Jose, US
• Jen-Chou Tseng · Guoxing Township, TW
• Han-Jen Yang · Taipei, TW
• Arabinda Das · Hsinchu, TW

Key dates

• Filing date: Dec 24, 2018
• Grant date: Jan 28, 2020
• Expiry date: Dec 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/813

Abstract

A semiconductor device includes semiconductor fins on semiconductor strips on a substrate. The semiconductor fins are parallel to each other. A gate stack is over the semiconductor fins, and a drain epitaxy semiconductor region is disposed laterally from a side of the gate stack and on the semiconductor strips. A first dielectric layer is over the substrate, and the first dielectric layer has a first metal layer. A second dielectric layer is over the first dielectric layer, and the second dielectric layer has a second metal layer. Vias extend from the second metal layer and through the first dielectric layer, and the vias are electrically coupled to the drain epitaxy semiconductor region.