Integrated circuit (IC) devices including cross gate contacts
US10546855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2017 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Jan 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.