Trench MOS device with improved single event burn-out endurance

US10546951B2 · kind B2 · utility

Assignees

• University of Electronic Science and Technology of China · CN
• Institute of Electronic and Information Engineering of UESTC in Guangdong · CN

Inventors

• Min Ren · Nanhu, CN
• Yuci Lin · Chengdu, CN
• Chi Xie · Nanhu, CN
• Zhiheng Su · Chengdu, CN
• Zehong Li · Chengdu, CN
• Jinping Zhang · Grand Blanc, US
• Wei Gao · Shanghai, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Sep 17, 2016
• Grant date: Jan 28, 2020
• Expiry date: Oct 16, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/144

Abstract

A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.