Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
US10551165B2 · kind B2 · utility
0Cited by
21References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2016 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/673
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This present disclosure generally relates to devices, methods, and systems for producing large numbers of SiO2 coated silicon chips with uniform film thickness controlled to angstrom and sub angstrom levels. The disclosure further relates to etching plates configured for receiving a plurality of chips mounted thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.