Active matrix substrate method of manufacturing active matrix substrate, and display device
US10551704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2017 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.