Photovoltaic perovskite oxychalcogenide material and optoelectronic devices including the same
US10553367B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 19, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Oct 19, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.