Power semiconductor device
US10553559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Sep 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.