Semiconductor device including gates
US10553605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Mar 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.