Thin-film transistor structure and manufacturing method thereof, display panel and display device
US10553621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Mar 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.