Semiconductor device
US10553693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Apr 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.