Tunable barrier transistors for high power electronics
US10553711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2015 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Apr 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Various aspects of tunable barrier transistors that can be used in high power electronics are provided. In one example, among others, a tunable barrier transistor includes an inorganic semiconducting layer; a source electrode including a nano-carbon film disposed on the inorganic semiconducting layer; a gate dielectric layer disposed on the nano-carbon film; and a gate electrode disposed on the gate dielectric layer over at least a portion of the nano-carbon film. The nano-carbon film can form a source-channel interface with the inorganic semiconducting layer. A gate field produced by the gate electrode can modulate a barrier height at the source-channel interface. The gate field may also modulate a barrier width at the source-channel interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.