Method of selectively transferring semiconductor device
US10553747B2 · kind B2 · utility
2Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | May 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.