Light emitting diode chip with protective layer of metal catalyst and fluorinated graphene and preparation method thereof

US10553762B2 · kind B2 · utility

Assignee

• HC SEMITEK CORPORATION · CN

Inventors

• Peng Xie · Xiamen, CN
• LINGFENG YIN · Xiamen, CN
• Tao Han · Shanghai, CN
• Jiangbo Wang · Beijing, CN
• Peng Li · 流花街道, CN

Key dates

• Filing date: Sep 29, 2017
• Grant date: Feb 4, 2020
• Expiry date: Sep 29, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8581

Abstract

A method for preparing a light emitting diode chip, the method including: 1) providing a substrate; 2) growing an n-type semiconductor layer, an active layer and a p-type semiconductor layer on the substrate sequentially in that order; 3) forming a step including an upper horizontal end surface, a lower horizontal end surface and a step surface in the n-type semiconductor layer, the active layer and the p-type semiconductor layer; 4) growing a transparent conductive layer on the upper horizontal end surface, and forming an etching hole in the middle of the transparent conductive layer; 5) forming an N electrode on the lower horizontal end surface, and forming a P electrode in the etching hole; 6) growing a metal catalyst layer on the light emitting diode chip; and 7) forming a fluorinated graphene protective layer on the metal catalyst layer.