Patent · US Active

Hybrid non-volatile memory devices with static random access memory (SRAM) array and non-volatile memory (NVM) array

US10559344B2 · kind B2 · utility

2Cited by

6References

20Claims

0Family size

Assignee

Aspiring Sky Co. Limited · CN

Inventors

Zhijiong Luo · Poughkeepsie, US
Shu Wang · Shakopee, US
Xiaoming Jin · Shanghai, CN

Key dates

Filing date	Sep 14, 2017
Grant date	Feb 11, 2020
Priority date	—
Expiry date	Jan 3, 2038

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02D10/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Technologies are generally described herein for a hybrid non-volatile memory structure that includes a number of SRAM buffers. SRAM access times may be achieved for non-volatile read/write operations by performing access queue buffered read/write operations first. The SRAM buffer may be shareable as a system SRAM. In other examples, a hybrid non-volatile memory according to some embodiments may include a high speed block and a high endurance block to store different types of data with different access needs. The hybrid non-volatile memory may also include a normal block to store the data which is non-frequently changed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.