Semiconductor device including a dielectric layer
US10559584B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Feb 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.