Imaging device and method of manufacturing imaging device
US10559610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Aug 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/028
Abstract
A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.