Light emitting device with reflective sidewall
US10559617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2019 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Feb 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.