Patent · US Active

Method of fabricating an enhancement mode group III-nitride HEMT device and a group III-nitride structure fabricated therefrom

US10559677B2 · kind B2 · utility

0Cited by

1References

19Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Shuzhen You · Leuven, BE
Niels Posthuma · Elewijt, BE

Key dates

Filing date	Nov 17, 2016
Grant date	Feb 11, 2020
Priority date	—
Expiry date	Nov 17, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/411
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The disclosure relates to a method of fabricating an enhancement mode Group III-nitride HEMT device and a Group III-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode Group III-nitride HEMT device. The method includes providing a structure. The structure includes a substrate having a main surface. The structure also includes a layer stack overlying the main surface. Each layer of the layer stack includes a Group III-nitride material. The structure further includes a capping layer on the layer stack. The method also includes forming a recessed gate region by removing, in a gate region, at least the capping layer by performing an etch process, thereby exposing a top surface of an upper layer of the layer stack. The method further includes forming a p-type doped GaN layer in the recessed gate region and on the capping layer by performing a non-selective deposition process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.