Nitride semiconductor epitaxial substrate
US10559679B2 · kind B2 · utility
0Cited by
0References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Aug 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a nitride semiconductor epitaxial substrate having a channel layer, a spacer layer, and an electron supply layer that are stacked in this order. The channel layer is GaN. The spacer layer is AlaGa1-aN (0<a<0.5). The electron supply layer is AlxlnyGa1-x-yN (0<x+y≤1). The spacer layer has a thickness of two molecular layers or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.