Oxide thin film transistor, manufacturing method thereof, array substrate and display device

US10559698B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• Fuzhou BOE Optoelectronics Technology Co., Ltd. · CN

Inventors

• Xiaowei Liu · Dongguan, CN
• Bo Liu · San Diego, US
• Yang Wang · Suzhou, CN
• Liangliang Li · Beijing, CN
• Zheng Liu · Beacon Falls, US
• Hongjiang Wu · Beijing, CN
• Jianfeng Yuan · Beijing, CN

Key dates

• Filing date: Jun 1, 2018
• Grant date: Feb 11, 2020
• Expiry date: Jun 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

Embodiments of the present application provide an Oxide TFT, a manufacturing method thereof, an array substrate and a display device. The Oxide TFT includes a base substrate; a gate electrode, a gate insulating layer and an active layer which are located on the base substrate; a source electrode and a drain electrode, the active layer is at least partly covered with the source electrode and the drain electrode; and a channel protection layer located between the source electrode and the drain electrode, each of the source electrode and the drain electrode includes at least part of a first metallic layer and at least part of a second metallic layer, the first metallic and the second metallic layer are stacked one on another, the channel protection layer is of a metal oxide.