Avalanche photodiode type structure and method of fabricating such a structure

US10559706B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Johan Rothman · Grenoble, FR

Key dates

• Filing date: Jul 7, 2017
• Grant date: Feb 11, 2020
• Expiry date: Jul 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1248

Abstract

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.