Light-emitting device and manufacturing method thereof
US10559717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.