Tunnel magnetic resistance element and method for manufacturing same
US10559748B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2017 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Feb 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.