Nonvolatile memory device and method of manufacturing the same
US10559750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Aug 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
According to one embodiment, a nonvolatile memory device includes a first conductive portion, an insulating film surrounding a side surface of the first conductive portion, an intermediate layer provided on the first conductive portion and the insulating film, a first film including a first portion provided on the intermediate layer and at least one second portion provided in the intermediate layer and outside an upper edge of the first conductive portion, the first film including, above the first conductive portion, a resistance change portion that has a first resistance state and a second resistance state having resistance higher than resistance in the first resistance state, and a second conductive portion provided at least on the resistance change portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.