Doping organic semiconductors
US10559753B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Aug 27, 2015 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/30
Abstract
We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.