Organic semiconductor solution blends for switching ambipolar transport to N-type transport
US10559754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2017 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | May 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/40
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition of matter useful as a current transport region in an organic semiconductor device comprises a semiconducting polymer; and means for accepting holes (e.g., a hole trapping compound) injected into the current transport region so as to impede conduction of the holes in the semiconducting polymer. This simple solution-processable method can improve the on and off current ratios (ION/IOFF) of OFETs by up to three orders of magnitude. Moreover, the treatment yields tailored blends that can be used to fabricate complementary inverters with excellent gain and low-power characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.