Process for electrochemically making at least one porous area of a micro and/or nanoelectronic structure
US10563319B2 · kind B2 · utility
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32Claims
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Key dates
| Filing date | Oct 15, 2014 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Nov 15, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0115
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer (6), the active layer (6) forming a front face of a stack, the stack comprising a back face (2) of conducting material and an insulating layer (4) interposed between the active layer (6) and the back face (2), said process comprising the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.