Temperature variation compensation
US10564900B2 · kind B2 · utility
6Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jun 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.