Method for programming a bipolar resistive switching memory device
US10566055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2014 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant state 0 or 1; a second mechanism applying, to the second electrode, a control signal that alternates, during time period d, between state 1 and state 0, the control signal being same regardless of the state in which the memory device is programmed; a selection device allowing a current to flow into the memory device during a programming time included in time period d; and a change of state of the control signal taking place during the programming time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.