Microwave probe, plasma monitoring system including the microwave probe, and method for fabricating semiconductor device using the system
US10566176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Mar 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01R9/05
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.