Plasma etching method
US10566208B2 · kind B2 · utility
0Cited by
0References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jul 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method for etching a multilayer laminate in which a silicon oxide film and a silicon nitride film are stacked includes an etching step of plasma etching the silicon oxide film and the silicon nitride film using a gas of a non-bromine-containing fluorocarbon together with a gas of a bromine-containing fluorocarbon compound represented by a compositional formula C3H2BrF3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.