Optoelectronic semiconductor device
US10566322B2 · kind B2 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06V40/1318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.