Photodetection device having a coating comprising trenches with a wide bandgap coating and production method

US10566366B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Johan Rothman · Grenoble, FR
• Florent Rochette · Seyssinet-Pariset, FR

Key dates

• Filing date: Nov 25, 2016
• Grant date: Feb 18, 2020
• Expiry date: Nov 25, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.