Patent · US Active

Micro-LED transfer method and manufacturing method

US10566494B2 · kind B2 · utility

7Cited by
2References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 23, 2015
Grant dateFeb 18, 2020
Priority date—
Expiry dateDec 23, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/85
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A micro-LED transfer method and a manufacturing method are disclosed. The micro-LED transfer method comprises: coating a sacrificial layer on a carrier substrate, wherein micro-LEDs are bonded on the carrier substrate through a first bonding layer (S1100); patterning the sacrificial layer to expose micro-LEDs to be picked up (S1200); bonding the micro-LEDs to be picked up with a pickup substrate through a second bonding layer (S1300); removing the sacrificial layer by undercutting (S1400); lifting-off the micro-LEDs to be picked up from the carrier substrate (S1500); bonding the micro-LEDs on the pickup substrate with a receiving substrate through a third bonding layer (S1600); and lifting-off the micro-LEDs from the pickup substrate (S1700).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.