Method for producing an optoelectronic semiconductor device and optoelectronic semiconductor device

US10566501B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Simeon Katz · Regensburg, DE
• Kai Gehrke · Regensburg, DE
• Massimo Drago · Riedenburg, DE
• Joachim Hertkorn · Neukirchen, DE

Key dates

• Filing date: Jun 16, 2016
• Grant date: Feb 18, 2020
• Expiry date: Jun 16, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032

Abstract

A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.