Photodetector with superconductor nanowire transistor based on interlayer heat transfer
US10566516B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jul 26, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4473
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The various implementations described herein include methods, devices, and systems for detecting light. In one aspect, a photodetector device includes: a superconducting wire, and a transistor that includes a semiconducting component and a superconducting component. The superconducting wire is electrically coupled to the superconducting component. The semiconducting component is located adjacent to the superconducting component. The superconducting component is configured to, in response to receiving an input current exceeding a current threshold, transition from a superconducting state to a non-superconducting state and generate heat sufficient to increase a temperature of the semiconducting component from a temperature below a semiconducting threshold temperature to a temperature above the semiconducting threshold temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.