Image sensor with depletion-level pixel charge transfer control
US10567683B2 · kind B2 · utility
2Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2015 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel circuit within an integrated-circuit image sensor includes a photodiode having a pinning layer of a first conductivity type, a floating diffusion node and a transfer gate disposed between the photodiode and the floating diffusion node. A first control input is coupled to the transfer gate, and a second control input is coupled to the pinning layer of the photodiode to enable the depletion potential of the photodiode to be raised and lowered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.