Process for the generation of metallic films

US10570514B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Falko Abels · Ludwigshafen, DE
• David Dominique Schweinfurth · Ludwigshafen, DE
• Karl Matos · Pittsburgh, US
• Daniel LOEFFLER · Ludwigshafen, DE
• Maraike Ahlf · Schriesheim, DE
• Florian BLASBERG · Frankfurt, DE
• Thomas Schaub · Ludwigshafen, DE
• Jan SPIELMANN · Mannheim, DE
• Axel Kirste · Ludwigshafen am Rhein, DE
• Boris Gaspar · Mannheim, DE

Key dates

• Filing date: Nov 29, 2016
• Grant date: Feb 25, 2020
• Expiry date: Nov 29, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/18
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.