Patent · US Active

Photolithography mask plate

US10571798B2 · kind B2 · utility

3Cited by
2References
10Claims
0Family size

Assignees

Inventors

Key dates

Filing dateAug 23, 2017
Grant dateFeb 25, 2020
Priority date
Expiry dateSep 11, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/30
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer located on the substrate; a patterned chrome layer located on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer located on the patterned chrome layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.