Repeller, cathode, chamber wall and slit member for ion implanter and ion generating devices including the same
US10573486B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 10, 2016 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Aug 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.