Semiconductor device and method for fabricating the same
US10573652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Apr 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.