Light emitting diode with tunnel junction

US10573781B1 · kind B1 · utility

Assignee

• Facebook Technologies, LLC · US

Inventors

• Anneli Munkholm · Corona, US
• David Massoubre · Cork, IE

Key dates

• Filing date: Aug 27, 2018
• Grant date: Feb 25, 2020
• Expiry date: Aug 27, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A light emitting diode (LED) is manufactured using a process in which hydrogen diffuses out of a p-doped semiconductor layer via an exposed side wall of the p-doped semiconductor layer. The process includes forming a light generation layer on a base semiconductor layer and forming the p-doped semiconductor layer on the light generation layer. A tunnel junction layer is formed on the p-doped semiconductor layer and a contact layer is formed on the junction layer. The process also includes etching through at least the contact layer, the tunnel junction layer, and the p-doped semiconductor layer to expose the side wall of the p-doped semiconductor layer and enabling hydrogen to diffuse out of the p-doped semiconductor layer at least partially through the exposed side wall.