Semiconductor light emitting device
US10573786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Aug 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.