Methods and systems relating to photochemical water splitting
US10576447B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2015 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.