Method for manufacturing silicon single crystal ingot, and silicon single crystal ingot manufactured by the method
US10577718B2 · kind B2 · utility
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Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Apr 10, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.